Light-emitting epitaxial structure and light-emitting diode chip

The invention provides a light-emitting epitaxial structure and a light-emitting diode chip. The light-emitting diode chip comprises a first active layer and a second active layer which are transited through a tunnel junction, or, the light-emitting diode chip comprises the first active layer and the second active layer which are overlapped through the insulating layer, so that the light-emitting diode chip comprises more light-emitting areas, and the light-emitting brightness of the light-emitting diode chip can be effectively improved. Meanwhile, by designing the light-emitting diode chip comprising more light-emitting areas, the light-emitting diode chip can have mixed-color dimming performance, and the application range of the light-emitting diode chip is expanded. 本发明提供了一种发光外延结构及发光二极管芯片，其中发光二极管芯片包括有通过隧穿结过渡的第一有源层和第二有源层；或者，发光二极管芯片包括有通过绝缘层相叠加的第一有源层和第二有源层，使得发光二极管芯片包括有更多的发光区域，能够有效提高发光二极管芯片的出光亮度。同时，通过设计包括更多发光区域的发光二极管芯片，能够使得发光二极管芯片具有混色调光的性能，扩大发光二极管芯片的适用范围。