Ordered semiconductor quantum dot preparation method and device

According to the preparation method of the ordered semiconductor quantum dots, the thermal segregation phenomenon naturally existing in the material epitaxy process is utilized, imaging (namely, the interference light field enhancement position) local heating is achieved through pulse laser interference, the etching process is not involved, the growth position of the quantum dots is directly determined by a laser interference pattern, and the quantum dots are not prone to growth. Therefore, the orderliness controllability is greatly guaranteed; the preparation method of the ordered semiconductor quantum dots, provided by the invention, is directly completed in situ in a molecular beam epitaxy system, so that the method is pollution-free and oxidation-free, the completion process is extremely simple and quick, and the cost and the time are comparable to those of one-time traditional S-K epitaxy self-assembly growth of quantum dots. 本发明所提供的有序半导体量子点制备方法，利用材料外延过程中自然存在的热偏析现象，通过脉冲激光干涉实现图形化(即干涉光场增强处)局域加热，不涉及刻蚀过程，量子点