Semiconductor device

This semiconductor device (1) is provided with a mounting substrate (10), a cured silicone resin film (20) that is in contact with the mounting substrate (10), and a first cured silicone resin (30) that is in contact with the cured silicone resin film (20). In the semiconductor device (1), the oxygen content per unit volume of the cured silicone resin film (20) is greater than the oxygen content per unit volume of the first cured silicone resin (30) in the entire thickness direction. 本发明的半导体装置(1)具有安装基板(10)、与安装基板(10)上相接触的有机硅树脂固化物薄膜(20)和与有机硅树脂固化物薄膜(20)相接触的第1有机硅树脂固化物(30)。在半导体装置(1)中，厚度方向全域中的有机硅树脂固化物薄膜(20)的每单位体积的氧含量多于第1有机硅树脂固化物(30)的每单位体积的氧含量。