Two-sided sphula fermi quantum computing device manufactured by ion implantation method

A quantum computing device is fabricated by forming a first resist pattern on a superconductor layer (410) defining a device region and a sensing region within the device region. The superconductor layer within the sensing region is removed, exposing a region of the first surface of the underlying semiconductor layer (340) outside the device region. And injecting the exposed region of the semiconductor layer to form an isolation region surrounding the device region. The sensing region and a portion of the device of the superconductor layer are exposed. A sense region contact (202) is formed by coupling the first surface of the semiconductor layer with the first metal layer. A nanopillar contact is formed using a first metal within a portion of the device region outside the sensing region (206, 212). A tunnel junction gate (204) is formed by depositing a second metal layer on a second surface of the semiconductor layer within the sense region. 通过在超导体层(410)上形成限定器件区和器件区内的感测区的第一抗蚀剂图案来制造量子计算器件。感测区内的超导体层被去除，从而暴露器件区