Gas supply method, substrate processing method, and gas supply apparatus
In the present invention, a first supply step is performed in which a first gas as a carrier gas for a second gas generated by vaporizing a material is mixed with the second gas, and a mixed gas of the first gas and the second gas is supplied to a substrate or other processing object (cleaning remov...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | In the present invention, a first supply step is performed in which a first gas as a carrier gas for a second gas generated by vaporizing a material is mixed with the second gas, and a mixed gas of the first gas and the second gas is supplied to a substrate or other processing object (cleaning removal). Next, a second supply step (evaporation drying) is performed in which the heated first gas is supplied to the object to be processed. As a result, it is possible to efficiently clean and remove foreign matter on the object to be processed.
在本发明中,进行第1供给工序,使第1气体作为通过使材料气化而生成的第2气体的载气与第2气体混合,将第1气体与第2气体的混合气体供给至基板等处理对象(清洗去除)。接着,进行将加热的第1气体向处理对象供给的第2供给工序(蒸发干燥)。由此,能够有效地进行处理对象上的异物的清洗以及去除。 |
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