Low-profile three-dimensional integrated radio frequency module for maintaining high Q value of element

The invention discloses a low-profile three-dimensional integrated radio frequency module for maintaining a high Q value of an element, which comprises a bottom chip and a high-precision switching substrate arranged above the bottom chip, and is characterized in that the bottom chip and the high-pre...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: LUO MING, LU XI, WANG WENBO, ZHANG JIFAN, LU ZIYAN, LIU YUNGANG, SONG QUAN, LIAO CHENGJU
Format: Patent
Sprache:chi ; eng
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Beschreibung
Zusammenfassung:The invention discloses a low-profile three-dimensional integrated radio frequency module for maintaining a high Q value of an element, which comprises a bottom chip and a high-precision switching substrate arranged above the bottom chip, and is characterized in that the bottom chip and the high-precision switching substrate are integrated together through interconnection bumps; a filter circuit, a first signal bonding pad and a first grounding bonding pad are arranged on the front surface of the bottom layer chip, a metal ground is arranged on the back surface of the bottom layer chip, and the first grounding bonding pad is connected with the metal ground; a second signal bonding pad and a second grounding bonding pad are arranged on the back surface of the high-precision switching substrate, the second signal bonding pad is correspondingly interconnected with the first signal bonding pad through an interconnection salient point, and the second grounding bonding pad is correspondingly interconnected with the