Airtight chip structure and preparation method thereof

The invention relates to an airtight chip structure and a preparation method thereof. The method comprises the following steps: respectively electroplating at least one first copper ring and at least one first copper column on a top TSV chip provided with at least one first circuit area; respectivel...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: TONG LIANGYU, YANG TING, AO GUOJUN
Format: Patent
Sprache:chi ; eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:The invention relates to an airtight chip structure and a preparation method thereof. The method comprises the following steps: respectively electroplating at least one first copper ring and at least one first copper column on a top TSV chip provided with at least one first circuit area; respectively electroplating at least one second copper ring and at least one second copper column on the bottom chip provided with at least one second circuit area; the electroplated top TSV chip is arranged on the electroplated bottom chip in an inverted mode, and an inverted chip is formed; and carrying out ball mounting on the top of the flip chip to form an airtight chip structure. The cavity structure with the built-in copper ring is formed based on the middle process and the bumping process, the cavity structure with the built-in copper ring can achieve 3D vertical interconnection between chips, the requirement for high air tightness is met, high-air-tightness chip packaging is achieved, and the packaging cost is low; b