Airtight chip structure and preparation method thereof
The invention relates to an airtight chip structure and a preparation method thereof. The method comprises the following steps: respectively electroplating at least one first copper ring and at least one first copper column on a top TSV chip provided with at least one first circuit area; respectivel...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | The invention relates to an airtight chip structure and a preparation method thereof. The method comprises the following steps: respectively electroplating at least one first copper ring and at least one first copper column on a top TSV chip provided with at least one first circuit area; respectively electroplating at least one second copper ring and at least one second copper column on the bottom chip provided with at least one second circuit area; the electroplated top TSV chip is arranged on the electroplated bottom chip in an inverted mode, and an inverted chip is formed; and carrying out ball mounting on the top of the flip chip to form an airtight chip structure. The cavity structure with the built-in copper ring is formed based on the middle process and the bumping process, the cavity structure with the built-in copper ring can achieve 3D vertical interconnection between chips, the requirement for high air tightness is met, high-air-tightness chip packaging is achieved, and the packaging cost is low; b |
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