Etching process method for regulating and controlling angle of etching slope of side wall of etched material

The invention discloses an etching process method for regulating and controlling the angle of an etching slope on the side wall of an etched material. The etching process method comprises the following steps: step 1, cleaning a plain film to be etched and then spin-coating photoresist; 2, manufacturing an alignment mark by adopting a lift-off process, exposing and developing the sample obtained in the step 1, depositing a Ti/Au thin film, and stripping the photoresist to obtain a subsequent photoetching process alignment mark; step 3, cleaning the sample obtained in the step 2, spin-coating the photoresist again, aligning the mark by using a first mask plate, performing inclined exposure, developing to form a photoresist side wall inclined surface, continuously aligning the mark by using other mask plates, performing exposure for multiple times, and developing to form a multi-direction photoresist side wall inclined surface; step 4, performing dry etching on the sample obtained in the step 3, and etching to a