Improving photoresist resolution by anisotropic copper plating
The substrate features copper electroplated by a method that includes copper electroplating a selectively deposited seed layer or a seed layer of a photoresist-defining feature with a copper electroplating composition containing a selective inhibitor compound capable of anisotropic plating and a sel...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | The substrate features copper electroplated by a method that includes copper electroplating a selectively deposited seed layer or a seed layer of a photoresist-defining feature with a copper electroplating composition containing a selective inhibitor compound capable of anisotropic plating and a selective leveler compound. Optionally, the seed layer may be treated with an aqueous solution of a sulfur-containing accelerator prior to copper electroplating.
基材的特征是通过一种方法电镀的铜,所述方法包括用铜电镀组合物铜电镀选择性沉积的籽晶层或光刻胶限定特征的籽晶层,所述铜电镀组合物含有能够各向异性镀覆的选择性抑制剂化合物和选择性整平剂化合物。任选地,可以在铜电镀之前用含硫促进剂的水溶液处理所述籽晶层。 |
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