Ferroelectric memory and preparation method thereof
The invention discloses a ferroelectric memory and a preparation method thereof, relates to the technical field of microelectronic manufacturing and memories, and aims to provide a ferroelectric memory which is relatively high in polarization intensity and has data retention time capable of meeting...
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| creator | LUO QING WANG BOPING YUAN PENG LYU SHUXIAN LIU MING |
| description | The invention discloses a ferroelectric memory and a preparation method thereof, relates to the technical field of microelectronic manufacturing and memories, and aims to provide a ferroelectric memory which is relatively high in polarization intensity and has data retention time capable of meeting the retention period requirement proposed by the industry. The ferroelectric memory includes: a lower electrode; the ferroelectric material layer is formed on the lower electrode, and the interface of the lower electrode and the ferroelectric material layer is processed by NH3; and the upper electrode is formed on the ferroelectric material layer.
本发明公开一种铁电存储器及其制备方法，涉及微电子制造及存储器技术领域，用于提供一种极化强度较高，数据保持时间可以满足业界提出的保持年限要求的铁电存储器。所述铁电存储器包括：下电极；形成在所述下电极上的铁电材料层，其中，所述下电极与所述铁电材料层的界面利用NH3进行了处理；形成在所述铁电材料层上的上电极。 |
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本发明公开一种铁电存储器及其制备方法，涉及微电子制造及存储器技术领域，用于提供一种极化强度较高，数据保持时间可以满足业界提出的保持年限要求的铁电存储器。所述铁电存储器包括：下电极；形成在所述下电极上的铁电材料层，其中，所述下电极与所述铁电材料层的界面利用NH3进行了处理；形成在所述铁电材料层上的上电极。</description><language>chi ; eng</language><subject>ELECTRICITY ; INFORMATION STORAGE ; PHYSICS ; STATIC STORES</subject><creationdate>2022</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20220705&DB=EPODOC&CC=CN&NR=114709214A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20220705&DB=EPODOC&CC=CN&NR=114709214A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>LUO QING</creatorcontrib><creatorcontrib>WANG BOPING</creatorcontrib><creatorcontrib>YUAN PENG</creatorcontrib><creatorcontrib>LYU SHUXIAN</creatorcontrib><creatorcontrib>LIU MING</creatorcontrib><title>Ferroelectric memory and preparation method thereof</title><description>The invention discloses a ferroelectric memory and a preparation method thereof, relates to the technical field of microelectronic manufacturing and memories, and aims to provide a ferroelectric memory which is relatively high in polarization intensity and has data retention time capable of meeting the retention period requirement proposed by the industry. The ferroelectric memory includes: a lower electrode; the ferroelectric material layer is formed on the lower electrode, and the interface of the lower electrode and the ferroelectric material layer is processed by NH3; and the upper electrode is formed on the ferroelectric material layer.
本发明公开一种铁电存储器及其制备方法，涉及微电子制造及存储器技术领域，用于提供一种极化强度较高，数据保持时间可以满足业界提出的保持年限要求的铁电存储器。所述铁电存储器包括：下电极；形成在所述下电极上的铁电材料层，其中，所述下电极与所述铁电材料层的界面利用NH3进行了处理；形成在所述铁电材料层上的上电极。</description><subject>ELECTRICITY</subject><subject>INFORMATION STORAGE</subject><subject>PHYSICS</subject><subject>STATIC STORES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2022</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDB2Sy0qyk_NSU0uKcpMVshNzc0vqlRIzEtRKChKLUgsSizJzM8DCpdk5KcolGSkFqXmp_EwsKYl5hSn8kJpbgZFN9cQZw_d1IL8-NTigsTk1LzUknhnP0NDE3MDSyNDE0djYtQAADOoLNw</recordid><startdate>20220705</startdate><enddate>20220705</enddate><creator>LUO QING</creator><creator>WANG BOPING</creator><creator>YUAN PENG</creator><creator>LYU SHUXIAN</creator><creator>LIU MING</creator><scope>EVB</scope></search><sort><creationdate>20220705</creationdate><title>Ferroelectric memory and preparation method thereof</title><author>LUO QING ; WANG BOPING ; YUAN PENG ; LYU SHUXIAN ; LIU MING</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN114709214A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2022</creationdate><topic>ELECTRICITY</topic><topic>INFORMATION STORAGE</topic><topic>PHYSICS</topic><topic>STATIC STORES</topic><toplevel>online_resources</toplevel><creatorcontrib>LUO QING</creatorcontrib><creatorcontrib>WANG BOPING</creatorcontrib><creatorcontrib>YUAN PENG</creatorcontrib><creatorcontrib>LYU SHUXIAN</creatorcontrib><creatorcontrib>LIU MING</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>LUO QING</au><au>WANG BOPING</au><au>YUAN PENG</au><au>LYU SHUXIAN</au><au>LIU MING</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Ferroelectric memory and preparation method thereof</title><date>2022-07-05</date><risdate>2022</risdate><abstract>The invention discloses a ferroelectric memory and a preparation method thereof, relates to the technical field of microelectronic manufacturing and memories, and aims to provide a ferroelectric memory which is relatively high in polarization intensity and has data retention time capable of meeting the retention period requirement proposed by the industry. The ferroelectric memory includes: a lower electrode; the ferroelectric material layer is formed on the lower electrode, and the interface of the lower electrode and the ferroelectric material layer is processed by NH3; and the upper electrode is formed on the ferroelectric material layer.
本发明公开一种铁电存储器及其制备方法，涉及微电子制造及存储器技术领域，用于提供一种极化强度较高，数据保持时间可以满足业界提出的保持年限要求的铁电存储器。所述铁电存储器包括：下电极；形成在所述下电极上的铁电材料层，其中，所述下电极与所述铁电材料层的界面利用NH3进行了处理；形成在所述铁电材料层上的上电极。</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | ELECTRICITY INFORMATION STORAGE PHYSICS STATIC STORES |
| title | Ferroelectric memory and preparation method thereof |
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