Ferroelectric memory and preparation method thereof

The invention discloses a ferroelectric memory and a preparation method thereof, relates to the technical field of microelectronic manufacturing and memories, and aims to provide a ferroelectric memory which is relatively high in polarization intensity and has data retention time capable of meeting the retention period requirement proposed by the industry. The ferroelectric memory includes: a lower electrode; the ferroelectric material layer is formed on the lower electrode, and the interface of the lower electrode and the ferroelectric material layer is processed by NH3; and the upper electrode is formed on the ferroelectric material layer. 本发明公开一种铁电存储器及其制备方法，涉及微电子制造及存储器技术领域，用于提供一种极化强度较高，数据保持时间可以满足业界提出的保持年限要求的铁电存储器。所述铁电存储器包括：下电极；形成在所述下电极上的铁电材料层，其中，所述下电极与所述铁电材料层的界面利用NH3进行了处理；形成在所述铁电材料层上的上电极。