Controlled cleavage process

从原料基片(10)的形成材料的薄膜的技术。此技术以所选择方式引导高能粒子通过基片(10)的表面到达表面下一选择深度(20)，这里粒子具有一定浓度以确定在所选深度以上的原料基片材料(12)和此所选深度的晶格的粒子。一能源例如压缩流体被定向到原料基片的被选择区域来在此所选深度(20)启动对基片(10)的切分动作，于是切分动作形成扩张切分阵面来由原料基片的剩余部分释放原料材料。 A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of introdu...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	F.J. HENLEY, N.W. CHEUNG
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CUTTING CUTTING-OUT DETAILS COMMON TO MACHINES FOR PERFORATING, PUNCHING,CUTTING-OUT, STAMPING-OUT OR SEVERING ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY HAND CUTTING TOOLS PERFORATING PERFORMING OPERATIONS PUNCHING SEMICONDUCTOR DEVICES SEVERING SEVERING BY MEANS OTHER THAN CUTTING STAMPING-OUT TRANSPORTING
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