Controlled cleavage process

从原料基片(10)的形成材料的薄膜的技术。此技术以所选择方式引导高能粒子通过基片(10)的表面到达表面下一选择深度(20)，这里粒子具有一定浓度以确定在所选深度以上的原料基片材料(12)和此所选深度的晶格的粒子。一能源例如压缩流体被定向到原料基片的被选择区域来在此所选深度(20)启动对基片(10)的切分动作，于是切分动作形成扩张切分阵面来由原料基片的剩余部分释放原料材料。 A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of introducing energetic particles (22) in a selected manner through a surface of a donor substrate (10) to a selected depth (20) underneath the surface, where the particles have a relatively high concentration to define a donor substrate material (12) above the selected depth and the particles for a pattern at the selected depth. An energy source such as pressurized fluid is directed to a selected region of the donor substrate to initiate a controlled cleaving action of the substrate (10) at the selected depth (20), whereupon the cleaving action provides an expanding cleave front to free the donor material from a remaining portion of the donor substrate.