Electrode assembly and producing method thereof
本发明讲述了一种电极装置及其制作方法,它至少可用于一种需要进行构造的薄膜,它包括以下步骤:准备好需要进行构造的薄膜,在需构造的薄膜上面放上一种掩膜,对需构造的薄膜进行干蚀。本发明方法的特征在于,掩膜含有一种金属硅化物,金属氮化物或金属氧化物等。本发明还提供了用上述方法制作的电极装置。 The electrode structure (10) has a first conductive layer (6) of material which is not etched by chemical dry etching, and a second conductive layer (7) of m...
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Zusammenfassung: | 本发明讲述了一种电极装置及其制作方法,它至少可用于一种需要进行构造的薄膜,它包括以下步骤:准备好需要进行构造的薄膜,在需构造的薄膜上面放上一种掩膜,对需构造的薄膜进行干蚀。本发明方法的特征在于,掩膜含有一种金属硅化物,金属氮化物或金属氧化物等。本发明还提供了用上述方法制作的电极装置。
The electrode structure (10) has a first conductive layer (6) of material which is not etched by chemical dry etching, and a second conductive layer (7) of material which can be chemically dry etched at least at a low etch rate. Preferably, the first layer (6) comprises a 4d or 5d transition metal or its conductive nitride or oxide and the second layer (7) comprises aluminium, titanium, tungsten or their conductive silicides, nitrides or oxides. Also claimed are: (i) the production of the above electrode structure by producing the first and second layers, structuring the second layer and then dry etching the first layer using the structured second layer as mask; and (ii) a process for contacting the above electrode structure by applying and structuring an insulating layer to form a via to the electrode structure and then depositing a conductive layer to fill the via. |
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