Method for adjusting height of floating gate thin film layer

The invention provides a method for adjusting the height of a floating gate thin film layer, and the method comprises the steps: providing a substrate, forming a gate layer on the substrate, and then forming an adjusting layer covering the gate layer; opening the adjusting layer by utilizing photoetching and etching to form a groove; forming a first thin film layer covering the adjusting layer on the substrate, and then forming a second mask layer covering the first thin film layer; and etching the second mask layer and the first thin film layer below the second mask layer, so that the first thin film layer is reserved on the surface of the groove between the second mask layers. The floating gate titanium nitride height required by the ultra-flash memory is achieved by adjusting the thickness of the adjusting layer, and the floating gate titanium nitride structure is applied to a novel ultra-flash memory. 本发明提供一种浮栅薄膜层高度的调整方法，提供衬底，衬底上形成有栅极层，之后形成覆盖栅极层的调整层；利用光刻和刻蚀打开调整层以形成凹槽；在衬底上形成覆盖调整层的第一薄膜层，之后形成覆盖第一薄膜层的第二掩膜层；刻蚀