Integrated chip, image sensor and forming method thereof
In some embodiments, the present disclosure relates to an integrated wafer, an image sensor, and a method of forming the same. The image sensor includes a substrate. The light detector is in the substrate and includes a semiconductor guard ring extending into the first side of the substrate. The sha...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | In some embodiments, the present disclosure relates to an integrated wafer, an image sensor, and a method of forming the same. The image sensor includes a substrate. The light detector is in the substrate and includes a semiconductor guard ring extending into the first side of the substrate. The shallow trench isolation structure extends into the first side of the substrate. The outer isolation structure extends into a second side of the substrate opposite the first side of the substrate to the shallow trench isolation structure. The shallow trench isolation structure and the outer isolation structure laterally surround the light detector. An internal isolation structure extends into the second side of the substrate and overlies the light detector. The internal isolation structure is vertically separated from the light detector by the substrate. In addition, the outer isolation structure laterally surrounds the inner isolation structure.
在一些实施例中,本公开涉及一种集成晶片、图像传感器及其形成方法。图像传感器包括衬底。光检测器位于衬底中且包含延伸到衬底的第一侧中的半导体保护环。 |
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