Intermediate infrared semiconductor laser emitting device

The invention discloses an intermediate infrared semiconductor laser emitting device. Comprising a 4.6 m quantum cascade laser (1), a collimating mirror (2), a parallel quadrangular body (3) and a focusing mirror (4). And the parallel quadrangular body (3) comprises an incident plane (3-1), a first reflecting plane (3-2), a second reflecting plane (3-3) and an emergent plane (3-4). A 4.6 m quantum cascade laser (1) is vertically incident on an incident surface (3-1) of a parallel quadrangular body (3) through a corresponding collimating mirror (2), total reflection occurs on a first reflecting surface (3-2) of the parallel quadrangular body (3), total reflection occurs on light beams after total reflection through a second reflecting surface (3-3) of the parallel quadrangular body (3), and then the light beams are output through an emergent surface (3-4) of the parallel quadrangular body (3). And the output light beam is emitted by a 4.6 m mid-infrared semiconductor laser through a focus lens (4). 本发明公开了发明了一种