Wet texturing method for inverted pyramid structure of crystalline silicon

The invention discloses a crystalline silicon inverted pyramid structure wet-method texturing method, and relates to the technical field of new materials and solar energy, in particular to a crystalline silicon inverted pyramid structure wet-method texturing method, which comprises the following steps: putting a crystalline silicon wafer with a clean surface into a container containing a mixed solution of sodium silicate and hydrofluoric acid, reacting for 120-140 minutes at 80 DEG C, filtering, washing, and drying to obtain the crystalline silicon inverted pyramid structure wet-method texturing method. Then, the corroded silicon wafer is put into a deionized water solution to be soaked, and hydrofluoric acid remaining on the surface of the silicon wafer is removed; the invention relates to a crystalline silicon inverted pyramid structure wet texturing method, which comprises the following steps of: putting a crystalline silicon wafer with a clean surface into a container containing a mixed solution of copper