Metal-insulator-metal (MIM) capacitor or back-end transistor with epitaxial oxide

Metal-insulator-metal capacitors or back-end transistors with epitaxial oxides are described. In a first example, a metal-insulator-metal (MIM) capacitor includes a first electrode plate. A capacitor dielectric is on the first electrode plate. The capacitor dielectric includes a single crystal oxide material. A second electrode plate is on the capacitor dielectric, the second electrode plate having a portion over and parallel to the first electrode plate. In a second example, a transistor includes a gate electrode over a substrate. A gate dielectric is over and on the gate electrode. The gate dielectric includes a single crystal oxide material. A channel material layer is on the single crystal oxide material. A source or drain contact is on the channel material layer. 描述了具有外延氧化物的金属绝缘体金属电容器或后端晶体管。在第一示例中，金属-绝缘体-金属(MIM)电容器包括第一电极板。电容器电介质在第一电极板上。电容器电介质包括单晶氧化物材料。第二电极板在电容器电介质上，第二电极板具有在第一电极板之上并与第一电极板平行的部分。在第二示例中，晶体管包括在衬底上方的栅电极。栅极电介质在栅电极上方且在栅电极上。栅极电介质包括单晶氧化物材料。沟道材料层在单晶氧化物材料上。源极或漏极触点在沟道材料层上。