Semiconductor structure with trench junction barrier schottky diode

The invention provides a semiconductor structure with a trench junction barrier Schottky diode. The semiconductor structure comprises a trench gate power metal oxide semiconductor field effect response transistor structure; and a trench junction barrier Schottky diode. A side grid electrode is not arranged in an insulating layer on the side wall of the trench junction barrier Schottky diode. The semiconductor structure with the trench junction barrier Schottky diode has the shortest current path, and the current path is perpendicular to the horizontal plane or the Schottky barrier. 本发明提供了一种具有沟槽结势垒肖特基二极管的半导体结构，包含：一沟槽式栅极功率金属氧化物半导体场效应应晶体管结构；以及一沟槽结势垒肖特基二极管；其中，该沟槽结势垒肖特基二极管的侧壁的一绝缘层内不具备有一侧栅极。本发明提供的具有沟槽结势垒肖特基二极管的半导体结构具有最短的电流路径、以及电流路径垂直于水平面或肖特基势垒。