POWER AMPLIFICATION DEVICE AND SEMICONDUCTOR DIE

The invention relates to a power amplifier device and a semiconductor die. In particular, the invention relates to a power amplification device operable at a radio frequency, RF, frequency, more particularly in a frequency range between 100 MHz and 40 GHz. A power amplification device of the present invention includes a semiconductor die on which a power transistor is integrated. The semiconductor die includes a shunt network including a plurality of first bonding wires arranged in series with a first capacitor arranged proximate the input side of the power transistor. The shunt network is configured to call out an output capacitance of the power transistor. In accordance with the transistor, a power amplification device includes a pair of coupling lines on a semiconductor die, where a first line of the pair of coupling lines is connected in series with an input of the power transistor, and where a second line of the pair of coupling lines is contained in a shunt network and is connected in series with a plur