Hybrid membrane scheme for self-aligned contact

The invention discloses a hybrid film scheme for self-aligned contact. A method of forming a semiconductor device includes forming a fin protruding higher than a substrate; forming a metal gate on the fin, wherein the metal gate is surrounded by the dielectric layer; etching the metal gate to reduce a height of the metal gate, where after etching, recesses are formed over the metal gate and between gate spacers of the metal gate; lining the sidewalls and bottom of the recess with a semiconductor material; filling the recess by forming a dielectric material over the semiconductor material; a mask layer is formed on the metal gate, and a first opening of the mask layer is located over the portion, adjacent to the metal gate, of the dielectric layer; removing the portion of the dielectric layer to form a second opening in the dielectric layer, the second opening exposing the lower layer source/drain region; and filling the second opening with a conductive material. 本申请公开了用于自对准接触的混合膜方案。一种形成半导体器件的方法包括：形成突出得高于衬底的鳍；