Plasma processing apparatus and plasma monitoring method using same

The present disclosure relates to a plasma processing apparatus capable of monitoring plasma and a plasma monitoring method using the same. The plasma processing apparatus includes: a first electrode on which an object to be processed is supported; a second electrode disposed to face the first electrode; a power supply unit configured to supply power to the first electrode; a measuring unit configured to measure a voltage Vdc of the second electrode; and the determination unit is configured to determine the self-bias voltage of the object to be processed according to the voltage of the second electrode. The present disclosure relates to an effect of improving measurement accuracy of a plasma state. 本公开涉及一种能够监测等离子体的等离子体处理设备及使用所述等离子体处理设备的等离子体监测方法。所述等离子体处理设备包括：第一电极，待处理物体支撑在第一电极上；第二电极，被设置成面向第一电极；供电单元，被配置成将功率供应到第一电极；测量单元，被配置成测量第二电极的电压Vdc；以及确定单元，被配置成依据第二电极的电压确定待处理物体的自偏压。本公开涉及提高对等离子体状态的测量准确性的效果。