Electron-beam cell projection aperture formation method

本发明提供了一种电子束投影孔径生成方法，它包括：把聚焦的离子束施加到基片顶表面的步骤，以便蚀刻成可获得用于吸收或散射电子束的足够的薄膜厚度的深度以在所述顶表面形成所需要的图形的开口；以及把所述聚焦的离子束均匀地施加到除去其边缘部分的基片底表面的步骤，以便蚀刻至达到开口的深度。 The present invention provides an electron-beam cell projection aperture formation method comprising: a step of applying a converged ion beam to a top surface of...

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1. Verfasser:	YAMASHITA KO
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	本发明提供了一种电子束投影孔径生成方法，它包括：把聚焦的离子束施加到基片顶表面的步骤，以便蚀刻成可获得用于吸收或散射电子束的足够的薄膜厚度的深度以在所述顶表面形成所需要的图形的开口；以及把所述聚焦的离子束均匀地施加到除去其边缘部分的基片底表面的步骤，以便蚀刻至达到开口的深度。 The present invention provides an electron-beam cell projection aperture formation method comprising: a step of applying a converged ion beam to a top surface of a substrate so as to be etched to a depth enabling to obtain a sufficient film thickness for absorbing or scattering an electron-beam thereby to form an opening of a desired pattern on the top surface; and a step of uniformly applying the converged ion beam to a back surface of the substrate, excluding a hem portion thereof, so as to be etched to a depth reaching the opening.