Semiconductor device

The invention provides a semiconductor device which suppresses the occupied area of a thin film transistor and improves the reliability of the semiconductor device. The semiconductor device has a thin film transistor in each pixel. The thin film transistor has: an oxide semiconductor layer; a gate insulating layer; a gate electrode that overlaps the oxide semiconductor layer with the gate insulating layer interposed therebetween; a source electrode in contact with the oxide semiconductor layer; a drain electrode in contact with the oxide semiconductor layer; and n (n is a natural number) metal layers that are in contact with the oxide semiconductor layer and are arranged between the source electrode and the drain electrode so as to traverse the oxide semiconductor layer, and the oxide semiconductor layer has (n + 1) channel regions between the source electrode and the drain electrode in plan view. 本发明提供一种半导体装置，抑制薄膜晶体管的占用面积并提高半导体装置的可靠性。半导体装置在各像素中具有薄膜晶体管。所述薄膜晶体管具有：氧化物半导体层；栅极绝缘层；隔着所述栅极绝缘层与所述氧化物半导体层重叠的栅极电极；与所述氧化物