Memory integrated microsystem

The invention relates to the field of memory integrated circuits, and provides a memory integrated microsystem which comprises an organic substrate, a power supply chip, a FLASH bare chip group, an A group DDR storage bare chip, a B group DDR storage bare chip, an IPD terminal resistor assembly, a bus interface end and a power supply interface end. Wherein the multiple DDR storage bare chips are stacked in a staggered mode, the DDR storage bare chips are connected with the organic substrate through bonding wires, and then the DDR storage bare chips are fanned out to micro-system PAD pins through internal wiring of the substrate. And all FLASH bare chips in the FLASH bare chip set are stacked in a staggered manner, and are connected with corresponding pins of the embedded bus of the substrate through corresponding bonding pads on the organic substrate. Besides, difficult design of topology, expansion, equal length and the like of the DDR storage system is completed through internal interconnection of the subst