Raw material treatment method for growing beta-phase gallium oxide single crystal by edge-defined film-fed growth method

The invention discloses a raw material treatment method for growing a beta-phase gallium oxide single crystal by an edge-defined film-fed growth method. The method comprises the following steps: 1, weighing Ga2O3 polycrystal powder and putting the Ga2O3 polycrystal powder into a crucible provided with a seamed mold; 2, putting the crucible into a growth furnace, and installing seed crystals; 3, vacuumizing, filling CO2 gas, and heating twice; 4, slowly lowering the seed crystal, lifting the seed crystal upwards after the bottom of the seed crystal is melted, cooling, and growing beta-phase gallium oxide polycrystal; 5, after the growth is finished, lifting the crystal to the position above the mold, and cooling the furnace body; 6, discharging CO2 gas in the furnace to normal pressure, and taking out beta-phase gallium oxide polycrystals; and 7, putting the beta-phase gallium oxide polycrystal material into a single crystal growth crucible, and carrying out beta-phase gallium oxide single crystal growth. By a