High-voltage element of switching type power supply circuit and manufacturing method of high-voltage element

The invention provides a high-voltage element of a switching type power supply circuit and a manufacturing method of the high-voltage element. The high-voltage element is used in a power level circuit of a switching type power supply circuit to serve as an upper bridge switch, and comprises at least one laterally diffused metal oxide semiconductor element, a second conductivity type isolation area and at least one Schottky barrier diode. The laterally diffused metal oxide semiconductor element includes: a well region formed in a semiconductor layer; a body region; a gate electrode; and a source electrode and a drain electrode. The second conductive type isolation region is in the semiconductor layer and is electrically connected with the body region. The Schottky barrier diode includes: a Schottky metal layer formed on the semiconductor layer; and a Schottky semiconductor layer formed in the semiconductor layer, the Schottky semiconductor layer forming a Schottky contact with the Schottky metal layer, and the