Complex compound of element of sub-group IV

本发明涉及第IV或V副族元素的新型络合物，该络合物在化学汽相沉积(CVD)-技术中以形成改进型前体组合。这种络合物排除了带α位质子的烷氧化物配位体，这样，通过络合物的水解不再释放任何还原剂。 A new complex of an element of transition group IV or V is provided for forming an improved precursor combination for use in chemical vapor deposition (CVD). This complex dispenses with an alkoxide ligand...

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Bibliographische Detailangaben
Hauptverfasser:	C. WERNER, R. METZGER, F. HINTERMAIER
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAININGELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN,SULFUR, SELENIUM OR TELLURIUM CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY ORGANIC CHEMISTRY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	本发明涉及第IV或V副族元素的新型络合物，该络合物在化学汽相沉积(CVD)-技术中以形成改进型前体组合。这种络合物排除了带α位质子的烷氧化物配位体，这样，通过络合物的水解不再释放任何还原剂。 A new complex of an element of transition group IV or V is provided for forming an improved precursor combination for use in chemical vapor deposition (CVD). This complex dispenses with an alkoxide ligand having an alpha proton, so that hydrolysis of the complex no longer liberates a reducing agent.