Semiconductor device

A semiconductor device includes: a first conductivity type semiconductor layer having a main surface and including a device region; a second conductivity-type base region formed in a surface layer portion of the main surface in the device region; a first-conductivity-type source region which defines...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: ISHIDA TSUYOSHI, YUKI TADAO
Format: Patent
Sprache:chi ; eng
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Beschreibung
Zusammenfassung:A semiconductor device includes: a first conductivity type semiconductor layer having a main surface and including a device region; a second conductivity-type base region formed in a surface layer portion of the main surface in the device region; a first-conductivity-type source region which defines a channel region between the semiconductor layer and the first-conductivity-type source region, and which is formed in a surface layer portion of the base region so as to be spaced inward from an edge portion of the base region; a second conductivity type base contact region formed in a surface layer portion of the base region; a first conductivity-type well region that defines a drift region between the base region and the first conductivity-type well region, the first conductivity-type well region being formed in a surface layer portion of the main surface at a distance from the base region in the device region; a first conductivity-type drain region formed in a surface layer portion of the well region; a second