Method of forming wrap-around gate input/output by selective epitaxial regrowth

Electronic devices and methods of forming fin structures with gate-all-around non-I/O devices and I/O devices are described. The plurality of dummy gates are etched to expose a fin including alternating layers of a first material and a second material. The second material layer is removed to create...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	COLOMBO BENJAMIN, STOUT PHILLIP, SIDDIQUI NAVED AHMED, BAUER MATTHIAS
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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