Method of forming wrap-around gate input/output by selective epitaxial regrowth

Electronic devices and methods of forming fin structures with gate-all-around non-I/O devices and I/O devices are described. The plurality of dummy gates are etched to expose a fin including alternating layers of a first material and a second material. The second material layer is removed to create an opening, and the remaining first material layer is epitaxially grown to form a fin structure. 描述了具有环绕式栅极非I/O装置和I/O装置的鳍状结构的电子装置和形成方法。蚀刻多个虚拟栅极，以暴露出包括第一材料和第二材料交替层的鳍片。第二材料层被移除以产生开口，而剩下的第一材料层经外延生长以形成鳍状结构。