Silicon core wire etching device and silicon core wire etching method

The invention provides a device capable of uniformly etching the whole surface of a silicon core wire. An etching device (1) for silicon core wires (C1, C2, C3) is provided with: etching liquid tanks (11, 12) for accommodating etching liquids (L1, L2); a plurality of core wire support members (31) in which holes (31A) through which the silicon core wires (C1, C2, C3) penetrate are formed, and which support the silicon core wires (C1, C2, C3); and a position changing mechanism (40) that changes the relative position at which the silicon core wires (C1, C2, C3) penetrate with respect to the hole (31A). 本发明提供一种能够将硅芯线的表面整体均匀蚀刻的装置。硅芯线(C1、C2、C3)的蚀刻装置(1)具备：蚀刻液槽(11、12)，蚀刻液槽(11、12)容纳蚀刻液(L1、L2)；多个芯线支持构件(31)，芯线支持构件(31)形成有硅芯线(C1、C2、C3)所贯穿的孔(31A)，并且支持硅芯线(C1、C2、C3)；以及位置改变机构(40)，位置改变机构(40)使硅芯线(C1、C2、C3)所贯穿的相对位置相对于孔(31A)改变。