Memory control method, memory storage device and memory control circuit unit

The invention provides a memory control method, a memory storage device and a memory control circuit unit. The method comprises the following steps: executing a first write-in operation based on a first programmed mode to continuously write first data into a plurality of first chip enabling regions through a plurality of channels; and after executing the first write operation, executing a second write operation based on a second programming mode so as to continuously write second data into the plurality of first chip enable areas and at least one second chip enable area through the plurality of channels. The total number of the plurality of first chip enabling regions is greater than the total number of the at least one second chip enabling region. Therefore, the access efficiency of the rewritable nonvolatile memory module can be improved. 本发明提供一种存储器控制方法、存储器存储装置及存储器控制电路单元。所述方法包括：基于第一程序化模式执行第一写入操作，以通过多个通道将第一数据连续写入至多个第一芯片使能区域；以及在执行第一写入操作之后，基于第二程序化模式执行第二写入操作，以通过所述多个通道将第二数据连续写入至所述多个第一芯片使能区域与至少一第二芯片使能区域。所述多个第一芯片使