SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

A semiconductor device (100) is provided with: a channel layer (103) of a group III nitride that does not contain Al; a barrier layer (104) of a group III nitride containing Al provided on the channel layer (103); a groove 106; the ohmic electrode 108 is arranged in the groove 106 and is in ohmic connection with the two-dimensional electron gas layer 105; the Al component ratio distribution of the barrier layer (104) in a first direction orthogonal to the surface of the substrate (101) has a maximum point at a first position (109). In the first direction, the semiconductor device is provided with: a first inclined surface 110 of the barrier layer 104, which includes a first position 109, and which is in contact with the ohmic electrode 108; and a second inclined surface (111) of the barrier layer (104), which intersects the first inclined surface (110) below the first inclined surface (110), and which is in contact with the ohmic electrode (108). The angle of the second inclined surface (111) with respect to