Semiconductor device, method of manufacturing same, and semiconductor device array including same

A semiconductor device, a method of manufacturing the same, and a semiconductor device array including the same are disclosed. The method includes providing at least one channel structure over at least one substrate; before a gate cutting process is performed, at least one gate mask layer is deposited on the at least one channel structure such that the at least one gate mask layer is formed on a top surface and a side surface of the at least one channel structure, the at least one gate mask layer is deposited on the at least one substrate and extends outwardly over the at least one substrate to form an outwardly extending portion of the at least one gate mask layer, wherein the at least one gate mask layer is self-aligned with respect to the at least one channel structure by deposition; and removing the outer extending part of the at least one gate mask layer, so that the at least one gate mask layer on the two sides of the at least one channel structure has the same width. 公开了半导体器件、制造其的方法和包括其的半导体器件阵列。该方法包括：在