Semiconductor structure and forming method thereof

The invention discloses a semiconductor structure and a forming method thereof, and the method comprises the steps: providing a substrate which is provided with a plurality of fin structures which are separated from one another; forming a gate dielectric film on the surface of the fin structure; forming a protective film on the substrate and the surface of the gate dielectric film; forming a gate electrode material layer on the surface of the protective film; part of the gate electrode material layer is etched until the surface of the protective film is exposed, a plurality of gate electrodes which are separated from one another are formed on the protective film, and the gate electrodes stretch across the fin structures. Therefore, the performance and the reliability of the semiconductor structure are improved, and the process difficulty of forming the semiconductor structure is reduced. 一种半导体结构及其形成方法，其中，方法包括：提供衬底，所述衬底上具有若干相互分立的鳍部结构；在所述鳍部结构表面形成栅介质膜；在所述衬底上和所述栅介质膜表面形成保护膜；在所述保护膜表面形成栅电极材料层；刻蚀部分所述栅电极材料层，直至暴露出所述保护膜