Preparation method of thin film transistor, thin film transistor and display device
The invention provides a preparation method of a thin film transistor, the thin film transistor and a display device. The problem that effective tail becomes large in the channel manufacturing process of a thin film transistor device is solved. The preparation method of the thin film transistor comp...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | The invention provides a preparation method of a thin film transistor, the thin film transistor and a display device. The problem that effective tail becomes large in the channel manufacturing process of a thin film transistor device is solved. The preparation method of the thin film transistor comprises the following steps: providing a substrate; forming a gate electrode, a gate insulating layer, an active layer and a metal layer which are sequentially laminated on the substrate; patterning the active layer and the metal layer to form an active island and source and drain electrodes located above the active island respectively; wherein the active island comprises an epitaxial part located on the periphery of the active island, and the orthographic projection of the epitaxial part on the substrate does not cover the orthographic projection of the gate electrode and the orthographic projection of the source and drain electrode on the substrate; and performing patterning processing on the active island to remov |
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