Gate oxide reinforcement method for improving total dose resistance of MOS (Metal Oxide Semiconductor) device

The invention discloses a gate oxide reinforcement method for improving the total dose resistance of an MOS device, and belongs to the field of microelectronic process manufacturing. According to the invention, a special CVD (chemical vapor deposition) or ALD (atomic layer deposition) method is adopted, and the deposition temperature is less than 800 DEG C, so that the high-quality gate oxide SiO2 medium of the MOS device is prepared; before an MOS device gate oxide layer is deposited through CVD or ALD, SiO2 with the thickness smaller than that of SiO2 is grown on the surface of a silicon substrate through a traditional hot gate oxide process, the interface state density is reduced, and the device parameter stability is improved. According to the manufacturing method, the thermal budget in the manufacturing process of the gate oxide SiO2 of the device can be reduced, the boron doping concentration of P-type Si at the interface of the STI isolation region is improved, the ionization total dose radiation resis