Bonded body, circuit board, and semiconductor device

A bonded body is provided with a ceramic member and a copper member bonded to the ceramic member via a bonding layer. The nanoindentation hardness (HIT) of the bonding layer is 1.0 GPa to 2.5 GPa. 一种接合体，其具备陶瓷构件和介由接合层而与陶瓷构件接合的铜构件。接合层的纳米压痕硬度HIT为1.0GPa～2.5GPa。...

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Bibliographische Detailangaben
Hauptverfasser:	NABA TAKAYUKI, KATO HIROMASA, UMEHARA MASASHI
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	ARTIFICIAL STONE BASIC ELECTRIC ELEMENTS CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS CEMENTS CERAMICS CHEMISTRY COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS CONCRETE ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY LIME, MAGNESIA MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS METALLURGY PRINTED CIRCUITS REFRACTORIES SEMICONDUCTOR DEVICES SLAG TREATMENT OF NATURAL STONE
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Beschreibung
Zusammenfassung:	A bonded body is provided with a ceramic member and a copper member bonded to the ceramic member via a bonding layer. The nanoindentation hardness (HIT) of the bonding layer is 1.0 GPa to 2.5 GPa. 一种接合体，其具备陶瓷构件和介由接合层而与陶瓷构件接合的铜构件。接合层的纳米压痕硬度HIT为1.0GPa～2.5GPa。