Semiconductor device

The present invention addresses the problem of preventing a change in the characteristics of a TFT caused by the capture of oxygen in an oxide semiconductor film by a metal electrode in a semiconductor device using an oxide semiconductor TFT. In order to solve the problem, the present invention adop...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	HANADA AKIHIRO, KAITO TAKUO, WATAKABE HAJIME
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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