Semiconductor device

The present invention addresses the problem of preventing a change in the characteristics of a TFT caused by the capture of oxygen in an oxide semiconductor film by a metal electrode in a semiconductor device using an oxide semiconductor TFT. In order to solve the problem, the present invention adopts the following structure. The semiconductor device includes a TFT in which a gate insulating film (105) is formed on a gate electrode (104), an oxide semiconductor film (106) is formed on the gate insulating film (105), the oxide semiconductor film (106) has a channel region (1061), a drain region (1063), and a source region (1064), and in a plan view, the gate insulating film (105) is formed on an upper surface of the gate electrode (104). A metal nitride film (10) is formed on a portion of the oxide semiconductor film (106) facing the channel region (1061), and the metal nitride film (10) is not present on a portion of the upper surface of the gate electrode (104). 本发明的课题为在使用了氧化物半导体TFT的半导体装置中防止由金属电极夺取氧化物半导体膜的氧而