Semiconductor device
The present invention addresses the problem of preventing a change in the characteristics of a TFT caused by the capture of oxygen in an oxide semiconductor film by a metal electrode in a semiconductor device using an oxide semiconductor TFT. In order to solve the problem, the present invention adop...
Gespeichert in:
| Hauptverfasser: | , , |
|---|---|
| Format: | Patent |
| Sprache: | chi ; eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | HANADA AKIHIRO KAITO TAKUO WATAKABE HAJIME |
| description | The present invention addresses the problem of preventing a change in the characteristics of a TFT caused by the capture of oxygen in an oxide semiconductor film by a metal electrode in a semiconductor device using an oxide semiconductor TFT. In order to solve the problem, the present invention adopts the following structure. The semiconductor device includes a TFT in which a gate insulating film (105) is formed on a gate electrode (104), an oxide semiconductor film (106) is formed on the gate insulating film (105), the oxide semiconductor film (106) has a channel region (1061), a drain region (1063), and a source region (1064), and in a plan view, the gate insulating film (105) is formed on an upper surface of the gate electrode (104). A metal nitride film (10) is formed on a portion of the oxide semiconductor film (106) facing the channel region (1061), and the metal nitride film (10) is not present on a portion of the upper surface of the gate electrode (104).
本发明的课题为在使用了氧化物半导体TFT的半导体装置中防止由金属电极夺取氧化物半导体膜的氧而 |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_CN114467184A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>CN114467184A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_CN114467184A3</originalsourceid><addsrcrecordid>eNrjZBAJTs3NTM7PSylNLskvUkhJLctMTuVhYE1LzClO5YXS3AyKbq4hzh66qQX58anFBYnJqXmpJfHOfoaGJiZm5oYWJo7GxKgBAF5_IPI</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Semiconductor device</title><source>esp@cenet</source><creator>HANADA AKIHIRO ; KAITO TAKUO ; WATAKABE HAJIME</creator><creatorcontrib>HANADA AKIHIRO ; KAITO TAKUO ; WATAKABE HAJIME</creatorcontrib><description>The present invention addresses the problem of preventing a change in the characteristics of a TFT caused by the capture of oxygen in an oxide semiconductor film by a metal electrode in a semiconductor device using an oxide semiconductor TFT. In order to solve the problem, the present invention adopts the following structure. The semiconductor device includes a TFT in which a gate insulating film (105) is formed on a gate electrode (104), an oxide semiconductor film (106) is formed on the gate insulating film (105), the oxide semiconductor film (106) has a channel region (1061), a drain region (1063), and a source region (1064), and in a plan view, the gate insulating film (105) is formed on an upper surface of the gate electrode (104). A metal nitride film (10) is formed on a portion of the oxide semiconductor film (106) facing the channel region (1061), and the metal nitride film (10) is not present on a portion of the upper surface of the gate electrode (104).
本发明的课题为在使用了氧化物半导体TFT的半导体装置中防止由金属电极夺取氧化物半导体膜的氧而</description><language>chi ; eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2022</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20220510&DB=EPODOC&CC=CN&NR=114467184A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,777,882,25545,76296</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20220510&DB=EPODOC&CC=CN&NR=114467184A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>HANADA AKIHIRO</creatorcontrib><creatorcontrib>KAITO TAKUO</creatorcontrib><creatorcontrib>WATAKABE HAJIME</creatorcontrib><title>Semiconductor device</title><description>The present invention addresses the problem of preventing a change in the characteristics of a TFT caused by the capture of oxygen in an oxide semiconductor film by a metal electrode in a semiconductor device using an oxide semiconductor TFT. In order to solve the problem, the present invention adopts the following structure. The semiconductor device includes a TFT in which a gate insulating film (105) is formed on a gate electrode (104), an oxide semiconductor film (106) is formed on the gate insulating film (105), the oxide semiconductor film (106) has a channel region (1061), a drain region (1063), and a source region (1064), and in a plan view, the gate insulating film (105) is formed on an upper surface of the gate electrode (104). A metal nitride film (10) is formed on a portion of the oxide semiconductor film (106) facing the channel region (1061), and the metal nitride film (10) is not present on a portion of the upper surface of the gate electrode (104).
本发明的课题为在使用了氧化物半导体TFT的半导体装置中防止由金属电极夺取氧化物半导体膜的氧而</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2022</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZBAJTs3NTM7PSylNLskvUkhJLctMTuVhYE1LzClO5YXS3AyKbq4hzh66qQX58anFBYnJqXmpJfHOfoaGJiZm5oYWJo7GxKgBAF5_IPI</recordid><startdate>20220510</startdate><enddate>20220510</enddate><creator>HANADA AKIHIRO</creator><creator>KAITO TAKUO</creator><creator>WATAKABE HAJIME</creator><scope>EVB</scope></search><sort><creationdate>20220510</creationdate><title>Semiconductor device</title><author>HANADA AKIHIRO ; KAITO TAKUO ; WATAKABE HAJIME</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN114467184A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2022</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>HANADA AKIHIRO</creatorcontrib><creatorcontrib>KAITO TAKUO</creatorcontrib><creatorcontrib>WATAKABE HAJIME</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>HANADA AKIHIRO</au><au>KAITO TAKUO</au><au>WATAKABE HAJIME</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Semiconductor device</title><date>2022-05-10</date><risdate>2022</risdate><abstract>The present invention addresses the problem of preventing a change in the characteristics of a TFT caused by the capture of oxygen in an oxide semiconductor film by a metal electrode in a semiconductor device using an oxide semiconductor TFT. In order to solve the problem, the present invention adopts the following structure. The semiconductor device includes a TFT in which a gate insulating film (105) is formed on a gate electrode (104), an oxide semiconductor film (106) is formed on the gate insulating film (105), the oxide semiconductor film (106) has a channel region (1061), a drain region (1063), and a source region (1064), and in a plan view, the gate insulating film (105) is formed on an upper surface of the gate electrode (104). A metal nitride film (10) is formed on a portion of the oxide semiconductor film (106) facing the channel region (1061), and the metal nitride film (10) is not present on a portion of the upper surface of the gate electrode (104).
本发明的课题为在使用了氧化物半导体TFT的半导体装置中防止由金属电极夺取氧化物半导体膜的氧而</abstract><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | chi ; eng |
| recordid | cdi_epo_espacenet_CN114467184A |
| source | esp@cenet |
| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | Semiconductor device |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-20T17%3A22%3A43IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=HANADA%20AKIHIRO&rft.date=2022-05-10&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3ECN114467184A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |