Nonvolatile random access memory magnetic rotation memory chip and preparation method thereof

The invention discloses a nonvolatile random access memory magnetic spin memory chip, which belongs to the field of semiconductors, and comprises a bottom layer metal connecting wire used for circuit layout and wiring; the bottom through hole is positioned between the bottom layer metal connecting w...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: SHI JINSHAN, HE YUYING, SHAN MENGLIN
Format: Patent
Sprache:chi ; eng
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Beschreibung
Zusammenfassung:The invention discloses a nonvolatile random access memory magnetic spin memory chip, which belongs to the field of semiconductors, and comprises a bottom layer metal connecting wire used for circuit layout and wiring; the bottom through hole is positioned between the bottom layer metal connecting wire and a bottom electrode and is used for connecting the bottom layer metal connecting wire and the bottom electrode; the bottom electrode is located on the bottom through hole and used for bearing a magnetic tunneling structure, and the bottom electrode is of a composite structure formed by multiple layers of conductive materials; the magnetic tunneling structure is used for reading and writing data by changing the overturning state of the magnetic tunneling structure; the bottom electrode is a composite structure formed by multiple layers of conductive materials, so that the flatness and the surface flatness of the bottom electrode can be greatly improved, and the surface roughness of the bottom electrode is opt