SEMICONDUCTOR DEVICE AND METHOD OF FORMING SEMICONDUCTOR DEVICE

Methods for forming under bump metal (UBM) structures having different surface profiles and semiconductor devices formed by the methods are disclosed. In an embodiment, a semiconductor device includes: a first redistribution line and a second redistribution line over a semiconductor substrate; a first passivation layer over the first redistribution line and the second redistribution line; a first under bump metal (UBM) structure over the first redistribution line and electrically coupled to the first redistribution line, the first UBM structure extending through the first passivation layer, a top surface of the first UBM structure being concave; and a second UBM structure over and electrically coupled to the second redistribution line, the second UBM structure extending through the first passivation layer, a top surface of the second UBM structure being flat or raised. 公开了用于形成具有不同表面轮廓的凸块下金属(UBM)结构的方法和通过该方法形成的半导体器件。在实施例中，半导体器件包含：位于半导体衬底上方的第一再分布线和第二再分布线；位于第一再分布线和第二再分布线上方的第一钝化层；位于第一再分布线上方并且电耦合到第一重布线的第一凸块下金属(UBM)