High performance high voltage isolator

An integrated circuit (100D) includes a semiconductor substrate (102) and a plurality of dielectric layers (122, 128) over the semiconductor substrate, the plurality of dielectric layers including a top dielectric layer (128D2). A metal plate (132) over the top dielectric layer; a metal ring (120E) is over the top dielectric layer and substantially surrounds the metal plate (132). A protective coating (141) covers the metal ring and the metal plate (132). A trench opening (146) is formed through the protective coating (141), the trench opening (146) exposing the top dielectric layer (128D2) between the metal plate (132) and the metal ring (120E), the trench opening (146) substantially surrounding the metal plate. 一种集成电路(100D)包括半导体衬底(102)和位于半导体衬底上方的多个电介质层(122、128)，多个电介质层包括顶部电介质层(128D2)。金属板(132)位于顶部电介质层上方；金属环(120E)位于顶部电介质层上方并且基本上包围金属板(132)。保护涂层(141)覆盖金属环和金属板(132)。穿过保护涂层(141)形成沟槽开口(146)，沟槽开口(146)暴露了在金属板(132)和金属环(120E)之间的顶部电介质层(128D2)，沟槽开口(146)基本上包围金属板。