GaN RC-HEMT with reverse conduction capability

The invention belongs to the technical field of semiconductors, and relates to a GaN RC-HEMT device with reverse conduction capability. On the basis of a traditional GaN HEMT device, an MOS type channel diode is introduced to serve as a fly-wheel diode, drain-source negative pressure enables the sid...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	ZHANG CHENG, DENG SIYU, LIAO DEZUN, JIA YANJIANG, XI LUFAN, YANG KEMENG, SUN TAO, WEI JIE, LUO XIAORONG
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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