GaN RC-HEMT with reverse conduction capability

The invention belongs to the technical field of semiconductors, and relates to a GaN RC-HEMT device with reverse conduction capability. On the basis of a traditional GaN HEMT device, an MOS type channel diode is introduced to serve as a fly-wheel diode, drain-source negative pressure enables the side wall of a groove-type source electrode structure to form an electron accumulation layer, a longitudinal fly-wheel channel is opened, current starts from an anode, passes through the longitudinal channel and then reaches a cathode through a transverse 2DEG channel below a second barrier layer, and the current reaches the cathode through a transverse 2DEG channel below a second barrier layer. The conduction voltage drop of the reverse freewheeling main path is basically not influenced by the gate driving negative voltage; when drain-source negative voltage reaches a certain value, a reverse freewheeling path of a traditional HEMT, namely a transverse 2DEG channel below a first barrier layer, is opened, and reverse