Memory array and method for forming memory array including strings of memory cells

The invention relates to a memory array and a method for forming a memory array including strings of memory cells. A memory array includes laterally spaced memory blocks, each including a vertical stack, the vertical stack including alternating insulating levels and conductive levels. A string of channel material of a memory cell extends through the insulating level and the conductive level. Intermediate material is laterally between and longitudinally along the laterally immediately adjacent memory blocks. The intermediate material in a lowermost portion of the conductive layer includes an intermediate material. A bridge extends laterally between the laterally immediately adjacent memory blocks. The bridge includes a bridge material having a different composition than the intermediate material. The bridges are longitudinally spaced along the laterally adjacent memory blocks by the intermediate material and extend laterally into the laterally adjacent memory blocks. Other embodiments including methods are dis